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        • Silicon carbide technology parameter
        • Silicon carbide technology parameter
        • Silicon carbide technology parameter
        • Silicon carbide technology parameter
        • Silicon carbide technology parameter
        • Silicon carbide technology parameter
        • Silicon carbide technology parameter
        • Silicon carbide technology parameter

        Silicon carbide technology parameter

        Silicon carbide technology parameter

        Introduction



        • Direct bonding SiC Compact SiC
          W(F.C)% ≤1 ≤1
          W(Fe2O3 ≤0.2 ≤0.2
          Pressure resisting(mpa) ≥229 ≥300
          Bending strength(mpa) ≥50 ≥60
          1400℃ bending strength(mpa) ≥60 ≥70
          Bulk density(g/cm3) ≥2.71 ≥3.4
          Apparent porosity(%) ≤15 ≤1.5
          1000℃ thermal conductive ≥27 ≥45

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